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| inchange semiconductor isc product specification isc silicon npn power transistors 2SC5763 description collector-emitter breakdown voltage- : v (br)ceo = 400v(min) fast switching speed wide area of safe operation applications designed for switching regulators applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 8 v i c collector current-continuous 7 a i cm collector current-peak 14 a total power dissipation @ t a =25 1.75 p c total power dissipation @ t c =25 55 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors 2SC5763 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 400 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 700 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 8 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 0.8a b 0.8 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 0.8a b 1.5 v i cbo collector cutoff current v cb = 400v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 0.8a; v ce = 5v 20 50 h fe-2 dc current gain i c = 4a; v ce = 5v 10 h fe-3 dc current gain i c = 1ma; v ce = 5v 10 c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 80 pf f t current-gain?bandwidth product i c = 0.8a; v ce = 10v 17 mhz switching times t on turn-on time 0.5 s t stg storage time 2.5 s t f fall time i c = 5a, i b1 = 1a; i b2 = -2a; r l = 40 ; v cc = 200v 0.25 s ? h fe-1 classifications m n 20-40 30-50 isc website www.iscsemi.cn 2 |
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